Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2008-05-13

2008-05-13

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180

Reexamination Certificate

active

11126330

ABSTRACT:
Based on a continuous erase start signal outputted, in response to an inputted continuous erase command, from a continuous erase control circuit, a shift circuit outputs a control signal for giving instructions to execute respective data erase operation to a plurality of non-volatile memory circuits sequentially, and when the data erase operation in all of the non-volatile memory circuits has been completed, the shift circuit outputs a continuous erase completion signal. Thereby, the data erase operation in all of the non-volatile memory circuits built in one chip can be continuously executed by one continuous erase command as is also the case where a single non-volatile memory circuit is built in.

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patent: 2003/0145151 (2003-07-01), Matsushita
patent: 05012889 (1993-01-01), None

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