Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-10-02
2007-10-02
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185090, C365S185120
Reexamination Certificate
active
11412938
ABSTRACT:
A semiconductor memory device includes: a memory cell array; a sense amplifier circuit for reading and writing data of the memory cell array page by page; a verify-judge circuit configured to judge write or erase completion based on the verify-read data held in the sense amplifier circuit; and data latches disposed for the respective columns in the memory cell array to be attached to the verify-judge circuit, into which column separation data are written to serve for excluding the corresponding columns from a verifying object, wherein the column separation data are automatically set in the data latches in an initial set-up mode at a power-on time so that at least a part of inaccessible columns for users are excluded from the verifying object.
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Dohmae Hiroyuki
Fukuda Koichi
Morooka Midori
Hoang Huan
Kabushiki Kaisha Toshiba
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