Static information storage and retrieval – Powering
Reexamination Certificate
2007-04-10
2007-04-10
Tran, M. (Department: 2827)
Static information storage and retrieval
Powering
C365S203000
Reexamination Certificate
active
11149788
ABSTRACT:
The present invention is related to a semiconductor memory device improving refresh performance by reliably generating an internal voltage. The internal voltage generator for use in the semiconductor memory device includes a cell plate voltage generator, a driving voltage generator, and a bit line precharge voltage generator. The bit line precharge voltage generator includes a half driving voltage generator for receiving the driving voltage to thereby generate the bit line precharge voltage, a second reference voltage generator for generating the second reference voltage, and a bit line precharge voltage releasing device for discharging a surplus voltage.
REFERENCES:
patent: 5258958 (1993-11-01), Iwahashi et al.
patent: 5325337 (1994-06-01), Buttar
patent: 2003/0133321 (2003-07-01), Jo
patent: 2005/0286301 (2005-12-01), Mochizuki
Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Tran M.
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