Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Reexamination Certificate
2007-01-23
2007-01-23
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
C257S469000, C365S211000
Reexamination Certificate
active
11205402
ABSTRACT:
A semiconductor memory device comprises a temperature dependent voltage source for outputting a voltage at its output in dependence on a temperature measured in the semiconductor memory device. At least one memory cell is provided with at least one first transistor. The first transistor includes a first transistor body, which is connected to the output of said temperature dependent voltage source.
REFERENCES:
patent: 5793691 (1998-08-01), Mullarkey
patent: 6556496 (2003-04-01), Benedix et al.
patent: 6809968 (2004-10-01), Marr et al.
patent: 6850448 (2005-02-01), Schnabel et al.
Bartenschlager Rainer
Lee Wen-Ming
Mun Jin Suk
Schnabel Florian
Sichert Christian
Infineon - Technologies AG
Jenkins Wilson Taylor & Hunt, P.A.
Nanya Technologies Corporation
Quach T. N.
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