Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-04-10

2007-04-10

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C365S189070

Reexamination Certificate

active

11020136

ABSTRACT:
There is provided a control circuit (409) for fetching a result of a comparison of a part of bits of entry data with a corresponding bit of comparison data and prohibiting a comparison of residual bits in the entry data with the corresponding bit of the comparison data when the result of the comparison is mismatched, and the comparison of the residual bits in the entry data with the corresponding bit of the comparison data is prohibited. Consequently, the number of signal lines to be activated in one cycle of a comparing operation is decreased. Thus, a reduction in a consumed power can be achieved.

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Noda et al., “A 143MHz 1.1W 4.5Mb Dynamic TCAM with Hierarchical Searching and Shift Redundancy Architecture”,2004 IEEE International Solid State Circuits Conference, Session 11, pp. 208-209 and 522-523.

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