Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-10-24

2006-10-24

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

C365S149000, C365S230060

Reexamination Certificate

active

07126835

ABSTRACT:
A memory cell has a first switching element, a second switching element and a storage capacitor and formed in an active region. A first bit line and a first word line are connected to the first switching element and a second bit line and a second word line are connected to the second switching element. A plurality of the memory cells are formed within the active region which extends in a straight line. The active region extends at an angle with respect to the bit and word lines. The active region thus has no bent portions. The deterioration of the characteristics of the memory cell caused by the bent portions can be prevented.

REFERENCES:
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patent: 6459632 (2002-10-01), Itou
patent: 6545904 (2003-04-01), Tran
patent: 2003/0117832 (2003-06-01), Tomishima
patent: 2004/0037107 (2004-02-01), Matsuoka
patent: 2005/0052939 (2005-03-01), Osabe et al.
patent: 2000-124331 (2000-04-01), None

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