Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-03-28

2006-03-28

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

C365S222000

Reexamination Certificate

active

07020043

ABSTRACT:
Provided is a semiconductor memory device that is capable of preventing unnecessary power consumption and providing high data reliability. The semiconductor memory device includes: a core voltage supplying part for supplying a core voltage; a memory cell array block; a bit line sense amplifier block for sensing and amplifying a voltage difference of bit line pairs of the memory cell array block; an overdriving signal generator for receiving an initial driving signal to generate an overdriving signal, while expanding an activation pulse width of the overdriving signal in an activation of a refresh signal; an overdriver for driving a connection node, which is coupled with the core voltage supplying part, to an external voltage higher than the core voltage in response to an inverted overdriving signal; a first power driver for driving a first power line of the bit line sense amplifier block to a voltage of the connection node in response to a first driving control signal; and a second power driver for driving a second power line of the bit line sense amplifier to a first power voltage in response to a second driving control signal.

REFERENCES:
patent: 6166977 (2000-12-01), Saitoh et al.
patent: 6359825 (2002-03-01), Aimoto et al.

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