Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2005-08-30
2005-08-30
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185210, C365S185230
Reexamination Certificate
active
06937515
ABSTRACT:
A semiconductor memory device has a reduced number of sense amplifiers to suppress an increase in chip size and power consumption as integration is increased. A semiconductor memory device can be adapted to read out from a memory cell array in pages or bursts can include sense amplifiers (2) for reading out data for a page length or burst length in two parts, including a first half and second half, and a page buffer (3) for storing data for the page length or burst length read out from a memory cell array (1) by the sense amplifier (2).
REFERENCES:
patent: 6496415 (2002-12-01), Tsao
Kawaguchi Naoichi
Sudo Naoaki
Sugawara Hiroshi
Lam David
NEC Electronics Corporation
Sako Bradley T.
Walker Darryl G.
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