Static information storage and retrieval – Addressing – Sync/clocking
Reexamination Certificate
2005-09-13
2005-09-13
Phung, Anh (Department: 2824)
Static information storage and retrieval
Addressing
Sync/clocking
C365S189050
Reexamination Certificate
active
06944092
ABSTRACT:
A semiconductor memory device features a nonvolatile ferroelectric mode register. In the semiconductor memory device, a reset process of the mode register is not required in a power-up mode. Additionally, the semiconductor memory device comprising a nonvolatile ferroelectric mode register can perform the same operation as that of SDR (Single Data Rate) SDRAM (Synchronous Dynamic Random Access Memory) or DDR (Double Data Rate) SDRAM. Accordingly, in the semiconductor memory device, data stored in the mode register can be maintained in a power-off state, and the compatibility with DRAM can be obtained.
REFERENCES:
patent: 5812491 (1998-09-01), Shinozaki et al.
patent: 5973988 (1999-10-01), Nakahira et al.
patent: 6067244 (2000-05-01), Ma et al.
patent: 6104668 (2000-08-01), Lee et al.
patent: 6272594 (2001-08-01), Gupta et al.
patent: 6301145 (2001-10-01), Nishihara
patent: 6314016 (2001-11-01), Takasu
patent: 6327175 (2001-12-01), Manapat et al.
patent: 6363439 (2002-03-01), Battles et al.
patent: 6434661 (2002-08-01), Konishi et al.
patent: 6845055 (2005-01-01), Koga et al.
patent: 1020040059009 (2004-07-01), None
Heller Ehrman LLP
Hynix / Semiconductor Inc.
Phung Anh
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