Semiconductor memory component in cross-point architecture

Details Semiconductor memory component in cross-point architecture Semiconductor memory component in cross-point architecture

2007-05-08

2007-05-08

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Read only systems

Semiconductive

C365S175000

Reexamination Certificate

active

11115953

ABSTRACT:
A programmable metallization memory cell with a storage region (3) formed from a chalcogenide glass and an electrode (4) which is preferably silver is located at the crossing point of a respective bit line (1) and a respective word line (2). There is a pn junction between the bit lines (1) and the chalcogenide glass.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 2003/0193053 (2003-10-01), Gitton
patent: 2004/0124407 (2004-07-01), Kozicki et al.
patent: 2006/0056227 (2006-03-01), Parkinson
Kolobov, A. V., et al., “On the mechanism of photodoping in vitreous chalcogenides,” Philosophical Magazine B, vol. 61, No. 5, 1990, pp. 859-865.
Parkin, S.S.P., et al., “Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited),” Journal of Applied Physics, vol. 85, No. 8, Apr. 15, 1999, pp. 5828-5833.
Kozicki, M.N., et al., “Applications of Programmable Resistance Changes in Metal-Doped Chalcogenides,” Electrochemical Society Proceedings, vol. 99, No. 13, pp. 298-309.

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