Semiconductor memory cell, method for fabricating it and...

Details Semiconductor memory cell, method for fabricating it and... Semiconductor memory cell, method for fabricating it and...

2008-04-15

2008-04-15

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257S326000, C257S536000, C365S232000

Reexamination Certificate

active

11075481

ABSTRACT:
A semiconductor memory cell, a method for fabricating it and a semiconductor memory device. A phase change material region of a storage element of the semiconductor memory cell has been or is formed as a lining region of a wall region of a contact recess which passes all the way through an insulation region between a first electrode device and a second electrode device. Furthermore, the space or region of the contact recess which is not taken up by the material region of the storage element has been or is made substantially electrically insulating.

REFERENCES:
patent: 2002/0017701 (2002-02-01), Klersy et al.
patent: 2003/0047765 (2003-03-01), Campbell
patent: 2003/0209746 (2003-11-01), Horii
patent: 2004/0026686 (2004-02-01), Lung
patent: 04045584 (1992-02-01), None

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