Semiconductor memory cell and semiconductor memory device

Details Semiconductor memory cell and semiconductor memory device Semiconductor memory cell and semiconductor memory device

2006-05-23

2006-05-23

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S295000

Reexamination Certificate

active

07049628

ABSTRACT:
The semiconductor memory cell is characterized in that at least one modulation region is provided between a first gate electrode of the gate electrode configuration and the insulation region, and in that the modulation region has or is formed from a material or modulation material having electrical and/or further material properties that can be modulated in a controllable manner between at least two states in such a way that, in accordance with these states of the modulation material or of the modulation region, the channel region can be influenced electromagnetically, in particular for a given electrical potential difference between the first gate electrode and the source/drain regions.

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