Semiconductor memory cell and method of manufacturing the same

Details Semiconductor memory cell and method of manufacturing the same Semiconductor memory cell and method of manufacturing the same

1998-04-01

2000-04-25

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

Particular connection

3651851, 36518501, 365182, 257369, 257365, 257366, H01L 2976

Patent

active

060551828

ABSTRACT:
A semiconductor memory cell comprising (1) a first transistor of a first conductivity type for read-out having source/drain regions composed of a surface region of a third region and a second region and a channel forming region composed of a surface region of a first region, (2) a second transistor of a second conductivity type for write-in having source/drain regions composed of the first region and a fourth region and a channel forming region composed of a surface region of the third region, and (3) a junction-field-effect transistor of a first conductivity type for current control having gate regions composed of the fourth region and a portion of the first region facing the fourth region, a channel region composed of the third region sandwiched by the fourth region and the first region and source/drain regions composed of the third region.

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