Semiconductor memory cell

Communications: electrical – Digital comparator systems

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G11C 1140

Patent

active

040514641

ABSTRACT:
An electrically alterable semiconductor memory cell is provided wherein a memory cell select line can be operated at a relatively low voltage.

REFERENCES:
patent: 3728695 (1973-04-01), Bentchkowsky
patent: 3744036 (1973-07-01), Bentchkowsky
patent: 3836992 (1974-09-01), Abbas et al.
James, Electrically Rewritable Nonvolatile Storage Having Reduced Write Voltage, IBM Technical Disclosure Bulletin, vol. 16, No. 2, July, 1973, pp. 690-691.

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