Semiconductor memory capable of transitioning from a...

Details Semiconductor memory capable of transitioning from a... Semiconductor memory capable of transitioning from a...

2005-01-18

2005-01-18

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Powering

Data preservation

C365S228000, C365S227000, C365S233100, C365S230080

Reexamination Certificate

active

06845055

ABSTRACT:
A semiconductor memory that can make the transition from a power-down state in a synchronous mode to an asynchronous mode without setting by a control register and that needs no extra circuits. A state selection section chooses, by selecting an existing internal signal the level of which changes in the power-down state or an existing internal signal the level of which does not change in the power-down state in accordance with a state selection signal inputted in advance and passing a signal selected to a synchronous/asynchronous mode setting section, whether the semiconductor memory should make the transition from the power-down state to a standby state in the synchronous mode or a standby state in the asynchronous mode. In accordance with the selection by the state selection section, the synchronous/asynchronous mode setting section generates a signal for causing the semiconductor memory to make the transition between the synchronous mode and the asynchronous mode.

REFERENCES:
patent: 6088290 (2000-07-01), Ohtake et al.
patent: 6259291 (2001-07-01), Huang
patent: 6466075 (2002-10-01), Douchi et al.
patent: 6477108 (2002-11-01), Arimoto et al.
patent: 6608795 (2003-08-01), Arimoto et al.
patent: 6650594 (2003-11-01), Lee et al.
patent: 2003-162895 (2003-06-01), None

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