Semiconductor memory capable of burst operation

Details Semiconductor memory capable of burst operation Semiconductor memory capable of burst operation

1997-04-04

2000-09-05

Zarabian, A.

Static information storage and retrieval

Plural shift register memory devices

365236, 3651892, 36523003, G11C 700

Patent

active

061152803

ABSTRACT:
A semiconductor memory for operating in burst mode. The memory has a memory cell array divided into a plurality of memory blocks, a plurality of (e.g., 2) output registers each including a plurality of output data retaining blocks corresponding to the multiple memory blocks, and a burst counter unit. The output registers alternately receive data transferred from the memory cell array. In accordance with the result of counting by the burst counter unit, the data retained in the output registers is output alternately in bursts, whereby the speed of data read operation in the memory is boosted regardless of the operating speed of the memory cell array therein.

REFERENCES:
patent: 4899310 (1990-02-01), Baba et al.
patent: 5200925 (1993-04-01), Morooka
patent: 5220529 (1993-06-01), Kohiyara et al.
patent: 5463591 (1995-10-01), Aimoto et al.
patent: 5535172 (1996-07-01), Reddy et al.
patent: 5561633 (1996-10-01), Yamano
"IBM Prepares Synch SRAM Entries," Electric News, Jun. 6, 1994, p. 70.
Child, "RISC and Pentium drive demand for SRAMs that are fastest of the fast," Computer Design, Mar. 28, 1994, pp. 47-48.

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