Semiconductor memory capable of both read/write and read-only op

Details Semiconductor memory capable of both read/write and read-only op Semiconductor memory capable of both read/write and read-only op

1983-05-09

1985-06-25

Moffitt, James W.

Static information storage and retrieval

Read only systems

Capacitative

365178, 365184, G11C 1124

Patent

active

045258104

ABSTRACT:
A single-FET-per cell read/write memory having capacitor storage elements also contains a pattern of fixed, latent data represented by ion implants in some of the FETs. This pattern is loaded into the capacitors by addressing the cells with a voltage between the thresholds of the normal and the implant-modified FETs, so that some of the capacitors are discharged and others are not. Thereafter, the data may be read out, or overwritten with variable data, by addressing the cells with a voltage higher than both thresholds.

REFERENCES:
patent: 4031524 (1977-06-01), Heeren
patent: 4090257 (1978-05-01), Williams
patent: 4095281 (1978-06-01), Denes
patent: 4188671 (1980-02-01), Lynes
patent: 4195357 (1980-03-01), Kuo et al.
patent: 4202044 (1980-05-01), Beilstein et al.
patent: 4274147 (1981-06-01), Padgett et al.
patent: 4300210 (1981-11-01), Chakravarti et al.
patent: 4488265 (1984-12-01), Kotecha

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