Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1996-04-24
1999-01-26
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257201, 257105, 365180, H01L 29201, H01L 29737, G11C 1140
Patent
active
058641521
ABSTRACT:
A semiconductor memory has bit lines, word lines, ground lines, and memory cells. The bit lines intersect the word and ground lines, to form intersections where the memory cells are arranged, respectively. Each of the memory cells consists of a double-emitter transistor. This transistor has a collector, a first emitter, and a second emitter. Each base-emitter junction of the transistor has an N-shaped negative differential current-voltage characteristic that shows a relatively small gain up to a peak current and a relatively large gain after a valley current. The first emitter of each transistor is connected to a corresponding one of the ground lines. The second emitter is connected to a corresponding one of the word lines. The collector is connected to a corresponding one of the bit lines. Each of the memory cells has a small number of elements and requires only a small area.
REFERENCES:
patent: 5311465 (1994-05-01), Mori et al.
patent: 5438539 (1995-08-01), Mori
patent: 5561306 (1996-10-01), Imamura et al.
patent: 5574683 (1996-11-01), Mori
Fujitsu Limited
Munson Gene M.
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