Semiconductor memory and method for substituting a redundancy me

Static information storage and retrieval – Floating gate – Particular connection

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36518529, G11C 1604

Patent

active

056847408

ABSTRACT:
In a flash memory, each of substitution information circuits associated to a redundant memory cell array has an erase circuit for erasing the substitution information stored in memory cells in the substitution information circuit when the defectiveness of the corresponding memory cell in a main memory cell array is dissolved.

REFERENCES:
patent: 4392211 (1983-07-01), Nakano et al.
patent: 5410511 (1995-04-01), Michiyama
patent: 5586075 (1996-12-01), Miwa
patent: 5619454 (1997-04-01), Lee

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory and method for substituting a redundancy me does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory and method for substituting a redundancy me, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory and method for substituting a redundancy me will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1838418

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.