Semiconductor memory and manufacturing method of the semiconduct

Details Semiconductor memory and manufacturing method of the semiconduct Semiconductor memory and manufacturing method of the semiconduct

1999-10-28

2000-08-29

Smith, Matthew

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

438239, H01L 2166

Patent

active

061107530

ABSTRACT:
The thickness of the silicon oxide film covering the upper surface of the word lines 111 is thinner than the thickness of the insulation film spacer 127a covering the side of the gate electrode, and in reflection of this phenomenon, the step of the upper surface of the BPSG film 133 becomes smaller than 1/2 of the depth of focus DOF of the KrF excimer laser and bit lines 137a are formed which have a narrower width and interval than the wavelength of the KrF excimer laser free from the disconnection and the short circuit. As a consequence, bit lines have narrower widths and interval than the wavelength of the exposure light without sacrificing the productivity.

REFERENCES:
patent: 4882289 (1989-11-01), Moriuchi et al.

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