Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-11-06
2010-06-22
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185180, C365S072000, C257S314000, C257S315000
Reexamination Certificate
active
07742337
ABSTRACT:
A semiconductor memory is achieved which allows a reduction in the area of a memory array block without reducing the gate widths of floating gates. A plurality of select gates extend in straight lines in the X direction. Between the upper- and lower-side select gates, two rows' worth of floating gates are arranged. The plurality of floating gates are placed in a staggered arrangement (in other words, in a zigzag pattern). That is, looking at one floating gate in a specific column and another floating gate in a column adjacent to that specific column, those floating gates deviate from each other in the Y direction.
REFERENCES:
patent: 5502669 (1996-03-01), Saitoh
patent: 6014328 (2000-01-01), Onakado et al.
patent: 6031764 (2000-02-01), Imamiya et al.
patent: 6323088 (2001-11-01), Gonzalez et al.
patent: 6493269 (2002-12-01), Cernea
patent: 6531735 (2003-03-01), Kamigaki et al.
patent: 6636440 (2003-10-01), Maayan et al.
patent: 6885044 (2005-04-01), Ding
patent: 6949788 (2005-09-01), Fujiwara et al.
patent: 2001/0023954 (2001-09-01), Lee et al.
patent: 2004/0227245 (2004-11-01), Ding
patent: 2005/0029577 (2005-02-01), Nishizaka et al.
patent: 2005/0111279 (2005-05-01), Ogura et al.
patent: 2005/0135152 (2005-06-01), Lee et al.
patent: 2005/0145923 (2005-07-01), Chen et al.
patent: 2005/0207199 (2005-09-01), Chen et al.
patent: 03-085770 (1991-04-01), None
patent: 5-326886 (1993-12-01), None
patent: 11-087658 (1999-03-01), None
patent: 11-177071 (1999-07-01), None
patent: 2001-156275 (2001-06-01), None
patent: 2001-237330 (2001-08-01), None
patent: 2002-313970 (2002-10-01), None
patent: 2002-329398 (2002-11-01), None
Japanese Office Action dated Dec. 15, 2009 from corresponding Japanese Patent Application No. 2004-113752 and its English translation.
Imanishi Nobutaka
Kamakura Satoko
Kawamoto Kazuyuki
Kawauchi Koichi
Nomura Kazuo
Buchanan & Ingersoll & Rooney PC
Pham Ly D
Renesas Technology Corp.
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