Semiconductor memory

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185200, C365S210100

Reexamination Certificate

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07813182

ABSTRACT:
A semiconductor memory has a first-stage amplifier circuit, wherein data stored in a memory cells is read based on a potential between an amplifier input MOS transistor and an amplifier reference MOS transistor, the potential being outputted from the first-stage amplifier circuit.

REFERENCES:
patent: 6016272 (2000-01-01), Gerna et al.
patent: 7167394 (2007-01-01), La Placa et al.
patent: 7184345 (2007-02-01), Tran et al.
patent: 2007-42193 (2007-02-01), None

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