Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2008-08-14
2010-11-02
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257SE29170, C257SE29261
Reexamination Certificate
active
07825439
ABSTRACT:
A semiconductor memory according to an example of the invention includes active areas, and element isolation areas which isolate the active areas. The active areas and the element isolation areas are arranged alternately in a first direction. An n-th (n is odd number) active area from an endmost portion in the first direction and an (n+1)-th active area are coupled to each other at an endmost portion in a second direction perpendicular to the first direction.
REFERENCES:
patent: 6475891 (2002-11-01), Moon
patent: 2002/0132424 (2002-09-01), Furuhata
patent: 2006/0194429 (2006-08-01), Hashimoto et al.
patent: 2007/0105334 (2007-05-01), Jang et al.
patent: 2008/0006869 (2008-01-01), Kamigaichi et al.
patent: 2009/0057814 (2009-03-01), Izumi et al.
patent: 5-88375 (1993-04-01), None
patent: 8-46159 (1996-02-01), None
patent: 8-55920 (1996-02-01), None
patent: 11-97652 (1999-04-01), None
patent: 2005-116551 (2005-04-01), None
patent: 2006-156657 (2006-06-01), None
patent: 2007-165862 (2007-06-01), None
U.S. Appl. No. 12/191,592, filed Aug. 14, 2008, Izumi, et al.
U.S. Appl. No. 12/729,626, filed Mar. 23, 2010, Shino, et al.
Izumi Tatsuo
Kamigaichi Takeshi
Takahashi Shinya
Hoang Quoc D
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4175069