Semiconductor memory

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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Details

C257S002000, C257S004000, C257S005000, C257SE45002, C257SE45003

Reexamination Certificate

active

07550756

ABSTRACT:
In a semiconductor memory comprising a matrix of memory cells each composed of one transistor and one chalcogenide layer as a memory element, no chalcogenide layer is disposed at a joint between an upper electrode wire connected to the chalcogenide layer and another wiring layer.

REFERENCES:
patent: 5534711 (1996-07-01), Ovshinsky et al.
patent: 2004/0087074 (2004-05-01), Hwang et al.
patent: 2005/0111247 (2005-05-01), Takaura et al.
patent: 2005/0263823 (2005-12-01), Hwang et al.
patent: 4-45585 (1992-02-01), None
patent: 2000-349247 (2000-12-01), None
patent: 2004-31953 (2004-01-01), None
patent: 2004-153047 (2004-05-01), None
patent: 2004-289029 (2004-10-01), None

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