Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-07-07
2009-06-23
Purvis, Sue (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S004000, C257S005000, C257SE45002, C257SE45003
Reexamination Certificate
active
07550756
ABSTRACT:
In a semiconductor memory comprising a matrix of memory cells each composed of one transistor and one chalcogenide layer as a memory element, no chalcogenide layer is disposed at a joint between an upper electrode wire connected to the chalcogenide layer and another wiring layer.
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Asano Isamu
Kawagoe Tsuyoshi
Elpida Memory Inc.
Purvis Sue
Sughrue & Mion, PLLC
Yang Minchul
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