Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate
2007-08-28
2007-08-28
Phan, Trong (Department: 2827)
Static information storage and retrieval
Format or disposition of elements
C365S052000, C365S063000, C365S205000, C365S230030, C365S230060
Reexamination Certificate
active
11652012
ABSTRACT:
A DRAM adopting a single-intersection memory cell array having randomly accessible data registers accessed whenever the chip is accessed externally. When data items recorded in the data registers are simultaneously written in the memory cell array, the data items are encoded. When data items are read from the memory cell array into the data registers, the data items are decoded. The margin is enhanced because array noise derived from reading is reduced. In addition, the access time of the DRAM is also reduced.
REFERENCES:
patent: 4928260 (1990-05-01), Chuang et al.
patent: 4959811 (1990-09-01), Szczepanek
patent: 5050126 (1991-09-01), Tanaka et al.
patent: 5371711 (1994-12-01), Nakayama
patent: 5592407 (1997-01-01), Konishi et al.
patent: 6075735 (2000-06-01), Sugibayashi
patent: 6400626 (2002-06-01), Williams et al.
patent: 6414893 (2002-07-01), Miyamoto
patent: 6480406 (2002-11-01), Jin et al.
patent: 6560670 (2003-05-01), Ichiriu
patent: 6597594 (2003-07-01), Waller
patent: 8-297968 (1987-09-01), None
patent: 8-45275 (1994-07-01), None
patent: 11-110967 (1997-10-01), None
patent: 2002-93158 (2000-09-01), None
Satoshi Utsugi, Masami Hanyu, Yoshinori Muramatsu and Tadahiko Sugibayashi, “Noncomplimentary Rewriting and Serial-Data Coding Scheme for Shared-Sense-Amplifier Open-Bit-Line DRAM”, IEEE Journal of Solid-State Circuits, vol. 34, No. 10, Oct. 1999, pp. 1391-1394.
Ayukawa Kazushige
Kawahara Takayuki
Sakata Takeshi
Sekiguchi Tomonori
Takemura Riichiro
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Phan Trong
Reed Smith LLP
Renesas Techonology Corp.
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