Semiconductor memory

Static information storage and retrieval – Interconnection arrangements

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Details

365 51, G11C 506, H01L 2710

Patent

active

051950545

ABSTRACT:
In a semiconductor memory having word lines and power source lines such as bit lines, two word lines extending on both sides of each contact hole of one of the power source lines extending adjacent to each other extend between two adjacent contact holes of the other power source line, which are staggered from the contact hole of the one power source line. A peripheral circuit of the semiconductor memory can be simplified although the memory is suitable for high-speed operation and high integration.

REFERENCES:
patent: 4193125 (1980-03-01), Moriya
patent: 4281397 (1981-07-01), Neal et al.
patent: 4384349 (1983-05-01), McElroy
patent: 4493057 (1985-01-01), McElroy
patent: 4638458 (1987-01-01), Itoh
"Good bits swapped for bad in 64-kilobit E-PROM", Electronics, Mar. 13, 1980, vol. 53, pp. 115-121, by V. G. McKenny.
"Session XII: ROMs, PROMs and EROMs--THPM 12.3: A 5V 64K EPROM utilizing Predundant Circuitry", IEEE Int. Solid-State Circuits Conference, Feb. 1980, pp. 146-147, 270, by V. G. McKenny.

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