Static information storage and retrieval – Associative memories – Ferroelectric cell
Patent
1993-11-30
1997-08-12
Clawson, Jr., Joseph E.
Static information storage and retrieval
Associative memories
Ferroelectric cell
365177, 36518907, G11C 700
Patent
active
056572646
ABSTRACT:
A semiconductor memory comprises a write driver which is provided to correspond to respective data line and by which data lines connected with a memory cell through the control of a word line are driven in a write operation. The write driver includes MOSFETs of first group and MOSFETs of second group. In a case where a write enable signal does not designate the write operation, the MOSFETs of the first group are normally in ON states to pull up the data lines. Besides, in a case where the write enable signal designates the write operation, each of them operates in accordance with the value of input data, to maintain the ON states and pull up the corresponding data line in case of driving the data line to a "high" level and to fall into OFF states in case of driving the data line to a "low" level. On the other hand, the MOSFETs of the second group are normally in OFF states. Besides, in the case where the write enable signal designates the write operation, each of them operates in accordance with the value of the input data, to fall into ON state and draw the corresponding data line to the low level in the case of driving the data lines to the low level.
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Iwamura Masahiro
Mori Kazutaka
Yamauchi Tatsumi
Clawson Jr. Joseph E.
Hitachi , Ltd.
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