Stock material or miscellaneous articles – Composite – Of silicon containing
Patent
1996-12-13
2000-11-21
Yamnitzky, Marie
Stock material or miscellaneous articles
Composite
Of silicon containing
428702, 438479, B32B 900
Patent
active
061500313
ABSTRACT:
A semiconductor member in which a non-porous monocrystalline semiconductor region is arranged on a porous monocrystalline semiconductor region. An insulating material is bonded onto the surface of the non-porous monocrystalline layer.
REFERENCES:
patent: 3997381 (1976-12-01), Wanlass
patent: 4001864 (1977-01-01), Gibbons
patent: 4082570 (1978-04-01), House
patent: 4380865 (1983-04-01), Frye et al.
patent: 4459181 (1984-07-01), Benjamin
patent: 4800527 (1989-01-01), Ozaki et al.
patent: 4868140 (1989-09-01), Yonehara
patent: 4939101 (1990-07-01), Black
patent: 5010033 (1991-04-01), Tokunaga et al.
Mahajan ed., Concise Encyclopedia of Semiconducting Materials & Related Technologies, (1992) p. 480 (no month).
D. T. Gakkai, "LSI Hand Book", published by Ohm Company, p. 364, (Nov. 1984) with abstract.
Patent Abstracts of Japan, vol. 4, No. 44, Apr. 5, 1980 (corresponds to JP 55-16464).
X.--L. Xu et al., "Silicon On Quartz by Solid-State Diffusion Bonding (SSDB) Technology," 8030 Electronics Letters, vol. 24, No. 11, May 26, 1988, Stevenage GB, pp. 691-692.
J. Haisma, et al., "Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations," Japanese Journal of Applied Physics, vol. 28, No. 8, Aug. 1989, pp. 1426-1443.
"Crystalline Quality of Silicon Layer Formed by Fipos Technology," K. Imai et al., Journal of Crystal Growth, vol. 63, No. 3, Oct. 11, 1983, pp. 547-553.
"Electrolytic Shaping of Germanium and Silicon," A. Uhlir, Jr., The Bell System Technical Journal, Mar. 1956, pp. 333-347.
"Formation Mechanism of Porous Silicon Layer by Anodization in HF Solution," T. Unagami, Journal of the Electrochemical Society, vol. 127, No. 2, Feb. 1980, pp. 476-483.
"A New Dielectric Isolation Method Using Porous Silicon," K. Imai, Solid State Electronics, vol. 24, 1981, pp. 159-164 (No Month).
L. Vescan et al., "Low-Pressure Vapor-Phase Epitaxy of Silicon on Porous Silicon," Materials Letters, vol. 7, No. 3, Sep. 1988, pp. 94-98.
Takai et al., Porous Silicon Layers and its Oxide for the Silicon-on-Insulator Structure, Journal of Applied Physics, 60(1), Jul. 1, 1986.
Journal of Applied Physics, vol. 64, No. 10, Nov. 15, 1988, pp. 4943-4950, W.P. Maszara et al., "Bonding of Silicon Wafers for Silicon-On-Insulator".
Applied Physics Letters, vol. 43, No. 3, Aug. 1, 1983, pp. 263-265, M. Kimura et al., "Epitaxial Film Transfer Technique for Producing single crystal Si Film on an Insulating Substrate".
1989 IEEE SOS/SOI Technology Conference, 1989, pp. 64-65, A. Soderbarg, "Fabrication of Besoi-Materials Using Implanted Nitrogen as an Effective Etch Stop Barrier", (no month).
Canon Kabushiki Kaisha
Yamnitzky Marie
LandOfFree
Semiconductor member and process for preparing semiconductor mem does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor member and process for preparing semiconductor mem, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor member and process for preparing semiconductor mem will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1254759