Semiconductor member and process for preparing semiconductor mem

Fishing – trapping – and vermin destroying

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437106, 117 10, 117 86, H01L 2120

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053710371

ABSTRACT:
A process for preparing a semiconductor member by forming a member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, bonding the insulating surface of a member to the surface of the non-porous monocrystalline semiconductor region, and then removing the porous monocrystalline semiconductor region by etching.

REFERENCES:
patent: 3997381 (1976-12-01), Wanlass
patent: 4380865 (1983-04-01), Frye et al.
patent: 4459181 (1984-07-01), Benjamin
patent: 4800527 (1989-01-01), Ozaki et al.
patent: 4868140 (1989-09-01), Yonehara
patent: 5010033 (1991-04-01), Tokunaga et al.
Takai et al, "Porous Silicon Layers and its Oxide for the Silicon-on-Insulator Structure" J. Appl. Phys. vol. 60(1) 1 Jul. 1986 pp. 222-225.
"Crystalline Quality of Silicon Layer Formed by Fipos Technology," K. Imai et al., Journal of Crystal Growth, vol. 63, No. 3, Oct. 11, 1983, pp. 547-553.
"Electrolytic Shaping of Germanium and Silicon," A. Uhlir, Jr., The Bell System Technical Journal, Mar. 1956, pp. 333-347.
"Formation Mechanism of Porous Silicon Layer by Anodization in HF Solution," T. Unagami, Journal of the Electrochemical Society, vol. 127, No. 2, Feb. 1980, pp. 476-483.
"A New Dielectric Isolation Method Using Porous Silicon," K. Imai, Solid State Electronics, vol. 24, 1981, pp. 159-164.
Silicon-on-Insulator Technology and Devices, W. P. Maszara, vol. 90-6, 1990, pp. 199-212B, "SOI by Wafer Bonding: A Review."
L. Vescan et al., "Low-Pressure Vapor-Phase Epitaxy of Silicon on Porous Silicon," Materials Letters, vol. 7, No. 3, Sep. 1988, pp. 94-98.

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