Semiconductor material for use in thermoelectric conversion, the

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature

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Details

257470, 428688, 428697, 501108, 501126, H01L 31058

Patent

active

055788645

ABSTRACT:
A thermoelectric semiconductor material is disclosed. The material comprises a double oxide which contains antimony and has a trirutile crystal structure.

REFERENCES:
patent: 4490014 (1984-12-01), Levinson
patent: 4675123 (1987-06-01), Tsunooka
patent: 4710311 (1987-12-01), Ogawa

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