Metal working – Barrier layer or semiconductor device making
Patent
1993-06-28
1994-12-13
Hearn, Brian E.
Metal working
Barrier layer or semiconductor device making
414222, 414225, 414935, 414941, B28D 502
Patent
active
053726120
ABSTRACT:
A semiconductor material contacting member which greatly reduces potential for semiconductor material breakage is provided. Preferably, the contacting member is a ceramic cylinder (60) which can be used to brace a semiconductor wafer (14) in a wafer station (2) of a sputtering system. The ceramic cylinder has an annular shoulder at one end (68), with a flat outer surface. The flat outer surface contacts the wafer (14) along a line (74). The line contacting surface (74) distributes pressure and heat across the contacting surface. Additionally, the ceramic cylinder (60) is relatively soft, thus avoiding damaging the semiconductor material.
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Barton, Jr. Francis W.
Cronin Wayne A.
Koetz Kirby F.
Bernstein Aaron
Hearn Brian E.
Motorola Inc.
Picardat Kevin M.
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