Semiconductor material and method for forming the same and thin

Details Semiconductor material and method for forming the same and thin Semiconductor material and method for forming the same and thin

1994-01-21

1999-10-05

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

257 66, 257607, H01L 2904

Patent

active

059628693

ABSTRACT:
A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5.times.10.sup.19 atoms.multidot.cm.sup.-3 or lower, preferably 1.times.10.sup.19 atoms.multidot.cm.sup.-3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.

REFERENCES:
patent: 4068020 (1978-01-01), Reuschel
patent: 4266986 (1981-05-01), Benton et al.
patent: 4365013 (1982-12-01), Ishioka et al.
patent: 4378417 (1983-03-01), Maruyama et al.
patent: 4469527 (1984-09-01), Sugano et al.
patent: 4591892 (1986-05-01), Yamazaki
patent: 4597160 (1986-07-01), Ipri
patent: 4727044 (1988-02-01), Yamazaki et al.
patent: 4740829 (1988-04-01), Nakagiri et al.
patent: 4755865 (1988-07-01), Wilson et al.
patent: 4766477 (1988-08-01), Nakagawa et al.
patent: 4803528 (1989-02-01), Pankove
patent: 4814292 (1989-03-01), Sasaki et al.
patent: 4860069 (1989-08-01), Yamazaki
patent: 4862237 (1989-08-01), Morozumi et al.
patent: 4888305 (1989-12-01), Yamazaki et al.
patent: 4891330 (1990-01-01), Guha et al.
patent: 4897360 (1990-01-01), Guckel et al.
patent: 4959700 (1990-09-01), Yamazaki
patent: 4969025 (1990-11-01), Yamamoto et al.
patent: 4969031 (1990-11-01), Kobayashi et al.
patent: 4975387 (1990-12-01), Prokes et al.
patent: 4986213 (1991-01-01), Yamazaki et al.
patent: 5036373 (1991-07-01), Yamazaki
patent: 5077223 (1991-12-01), Yamazaki
patent: 5091334 (1992-02-01), Yamazaki et al.
patent: 5108843 (1992-04-01), Ohtaka et al.
patent: 5132754 (1992-07-01), Serikawa et al.
patent: 5132821 (1992-07-01), Nicholas
patent: 5210050 (1993-05-01), Yamazaki et al.
patent: 5250818 (1993-10-01), Saraswat et al.
patent: 5262654 (1993-11-01), Yamazaki
patent: 5272361 (1993-12-01), Yamazaki
patent: 5278093 (1994-01-01), Yonehara
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5313075 (1994-05-01), Zhang et al.
patent: 5313076 (1994-05-01), Yamazaki et al.
patent: 5543636 (1996-08-01), Yamazaki
patent: 5744818 (1998-04-01), Yamazaki
Wolf et al., "Silicon Processing For The VLSI Era," vol. 1, Lattice Press, Sunset Beach, California, pp. 19-21.
Wolf et al., "Silicon Processing For The VLSI Era", vol. I, Lattice Press, Sunset Beach, California, pp. 19-21.
Sameshima et al., "XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's", Japanese Journal of Applied Physics, vol. 28, No. 10, Oct. 1989, pp. 1789-1793.
Iwamatsu et al., Silicon-On-Sapphire M.O.S.F.E.T.S. Fabricated by Back-Surface Laser-Anneal Technology, Electronics Letters, vol. 15, #25, pp. 827-828, Dec. 1979.
Sera et al., "High Performance TFT's Fabricated by XeCl Excimer Laser Annealing of Hydrogenated Amorphous-Silicon Film", IEEE Transactions on Electron Devices, 36(1989), pp. 2868-2872.
Kiang et al., "Modification of Semiconductor Device Characteristics by Lasers", IBM, 1982, pp. 171-6.
Pressley, "Escimer Laser Processing of Semiconductors", Lasers & Applications, May 1985, pp. 93-98.
Pummer, "Commercial Excimer Lasers", Scientific and Engineering Applications of Commercial Laser Devices, pp. 38-42.
Yuki et al., "A Full-Color LCD Addressed by Poly-Si TFT's Fabricated Below 450.degree.C", IEE Transactions on Electron Devices, vol. 36, No. 9, pp. 1934-7.
Masumo et al., "Low Temperature Fabrication of Poly-Si TFT by Laser Induced Crystallization of a-Si", Journal of Non-Crystalline Solids, vol. 115, pp. 147-149.
Sameshima et al., "XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's", Materials Research Society Symposia, vol. 71, 1986, pp. 435-440.

Affiliated with

Also associated with

Rating

Semiconductor material and method for forming the same and thin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor material and method for forming the same and thin , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor material and method for forming the same and thin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1174351