Semiconductor masking for device fabrication utilizing ion impla

Details Semiconductor masking for device fabrication utilizing ion impla Semiconductor masking for device fabrication utilizing ion impla

1975-10-28

1977-06-21

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 91, H01H 21265

Patent

active

040309428

ABSTRACT:
The disclosure teaches the use of aluminum nitride as a mask for utilization of ion implantation in the formation of semiconductor configurations as well as an underlying material for use in semiconductor lift-off techniques in device formation and the deposition of metallization contact lines and interconnections.

REFERENCES:
patent: 3600218 (1971-08-01), Pennebaker
patent: 3756861 (1973-09-01), Payne et al.
Cuomo et al., "Mask Substrate Surface Shield," IBM Tech. Discl. Bull., vol. 15, No. 6, Nov. 1972, pp. 1728, 1729.
Weast, Ed., "Handbook of Chem. & Phys.," Chem. Rubber Co., Cleveland, O., 51st Ed., 1970-1971, p. B64.

Affiliated with

Also associated with

Rating

Semiconductor masking for device fabrication utilizing ion impla does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor masking for device fabrication utilizing ion impla, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor masking for device fabrication utilizing ion impla will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-734270