Semiconductor manufacturing process for low dislocation defects

Details Semiconductor manufacturing process for low dislocation defects Semiconductor manufacturing process for low dislocation defects

1994-11-22

1996-10-08

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 95, 117 96, 117106, 437 95, 437 96, C30B 2518

Patent

active

055627706

ABSTRACT:
The present invention provides a method of global stress modification which results in reducing number of dislocations in an epitaxially grown semiconducting device layer on a semiconductor substrate where the device layer and the substrate have a lattice mismatch. The invention teaches a method of imparting a convex curvature to the substrate by removing layer(s) of thin film from or adding layers of thin film to the back side of the substrate, so as to achieve a reduced dislocation density in the device layer.

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