Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Reexamination Certificate
2006-04-25
2006-04-25
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
C438S012000, C438S016000
Reexamination Certificate
active
07033843
ABSTRACT:
A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the moisture content in the airtight space is measured by a first moisture measuring device which is connected to the airtight space, and thereafter, the substrate is inserted and ejected by a substrate carrying system, and a reactive gas is processed while measuring the moisture content in the reaction chamber by a second moisture measuring device, which is connected to the reaction chamber, after the moisture content in the airtight space is measured.
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Hasegawa Hiroyuki
Ishihara Yoshio
Masusaki Hiroshi
Yamaoka Tomonori
Lebentritt Michael
Pillsbury Winthrop Shaw & Pittman LLP
Stevenson Andre′
Taiyo Nippon Sanso Corporation
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