Semiconductor manufacturing method and device

Coating processes – Coating by vapor – gas – or smoke

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4272551, 427233, 118719, C23C 1600

Patent

active

048267112

ABSTRACT:
An improved semiconductor processing is disclosed. In the manufacturing process, fluorine gas is introduced just after formation of semiconductor layer in a reaction. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky
patent: 4379181 (1983-04-01), Cannella
patent: 4441973 (1984-04-01), Noguchi
patent: 4505950 (1985-03-01), Yamazaki
patent: 4517223 (1985-05-01), Ovshinsky
patent: 4637895 (1987-01-01), Ovshinsky
Journal of Non-Crystalline Solids 68(1984) 167-174, North-Holland, Amsterdam, "Isomerization Model for Photo-Induced Effects in a-Si:H"; Shumpei Yamazaki et al.

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