Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1988-09-28
1991-01-22
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118722, 118725, 118 501, C23C 1648, C23C 1650
Patent
active
049862138
ABSTRACT:
An improved semiconductor processing is desclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.
REFERENCES:
patent: 4313783 (1982-02-01), Davies
patent: 4398343 (1983-08-01), Yamazaki
patent: 4405435 (1983-09-01), Tateishi
patent: 4482395 (1984-11-01), Hiramoto
patent: 4498416 (1985-02-01), Bouchaib
patent: 4503807 (1985-03-01), Nakayama
patent: 4582720 (1986-04-01), Yamazaki
patent: 4592306 (1986-06-01), Gallego
patent: 4592799 (1986-06-01), Hayafuji
patent: 4640223 (1987-02-01), Dozier
patent: 4694143 (1987-09-01), Nishimura
patent: 4698486 (1987-10-01), Sheets
patent: 4699863 (1987-10-01), Sawatari
Kuwano, Photovoltaic Behavior of Amorphous Si:H and Si:F:H Solar Cells, Conference Record, 15th IEEE Photovoltaic Specialists Conf., Kissimmee, Fla, May 12-15, 1981, Published Aug. 1981, pp. 698-703.
Abe Masayoshi
Fukada Takeshi
Inujima Takashi
Kinka Mikio
Kobayashi Ippei
Bueker Richard
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor manufacturing device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor manufacturing device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor manufacturing device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1548198