Semiconductor manufacturing apparatus

Details Semiconductor manufacturing apparatus Semiconductor manufacturing apparatus

1987-08-14

1989-04-25

Niebling, John F.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 2041923, C23C

Patent

active

048245461

ABSTRACT:
A semiconductor manufacturing for depositing an insulating thin film on a surface of a semiconductor substrate in a vacuum vessel at an atmosphere of reduced pressure, wherein radiofrequency powers each having different first and second radiofrequencies are applied respectively to a target electrode composed of a material for an insulating thin film and a succeptor electrode for holding said semiconductor substrate. The first frequency is selected to be lower than said second frequency, whereby a high quality insulating film having a surface excellent in flatness can be assured without damaging the substrate.

REFERENCES:
patent: 3704219 (1972-11-01), McDonell et al.
patent: 4525262 (1985-06-01), Class et al.
patent: 4579618 (1986-04-01), Celestino et al.
H. Norstrom, "Experimental . . . Chemistry", Vacuum/Volume 29/No. 10, Oct. 1979.
Vossen et al., "Ultra . . . bias", J. Vac. Sci. Technol., vol. 12, No. 5, Sep./Oct. 1975.

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