Semiconductor manufacturing apparatus

Details Semiconductor manufacturing apparatus Semiconductor manufacturing apparatus

1991-04-23

1992-10-20

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429806, 20419212, 2041923, C23C 1434

Patent

active

RE0341061

ABSTRACT:
A semiconductor manufacturing for depositing an insulating thin film on a surface of a semiconductor substrate in a vacuum vessel at an atmosphere of reduced pressure, wherein radiofrequency powers each having different first and second radiofrequencies are applied respectively to a target electrode composed of a material for an insulating thin film and a succeptor electrode for holding said semiconductor substrate. The first frequency is selected to be lower than said second frequency, whereby a high quality insulating film having a surface excellent in flatness can be assured without damaging the substrate.

REFERENCES:
patent: 3704219 (1972-11-01), McDowell
patent: 4525262 (1985-06-01), Class et al.
patent: 4579618 (1986-04-01), Celestino et al.
J. L. Vossen and J. J. O'Neill, Jr. Ultra Stable System for RF Sputtering With RF-Induced Substrate Bias.
H. Norstrom Experimental And Design Information For Calculating Impedance Matching Networks For Use In RF Sputtering And Plasma Chemistry.

Affiliated with

Also associated with

Rating

Semiconductor manufacturing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor manufacturing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor manufacturing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-184665