Semiconductor magneto-transistor device

Details Semiconductor magneto-transistor device Semiconductor magneto-transistor device

1980-05-05

1983-01-18

Strecker, Gerard R.

Electricity: measuring and testing

Magnetic

Magnetometers

357 27, 307309, G01R 3302, H01L 2722, H01L 4300

Patent

active

043694063

ABSTRACT:
A device for reading information representing magnetization patterns on a medium by means of a time-of-flight magnetotransistor detector. The time-of-flight magnetotransistor detector consists of a bipolar transistor implemented on a semiconductor surface which is in a magnetic flux coupling with a plurality of magnetization patterns. Such magnetization patterns which may be generated by a magnetic bubble domain on an adjacent bubble domain device or by a magnetized region on an adjacent media such as a magnetic tape or disk. The magnetotransistor detector consists of an emitter region, an elongated base region, and a collector region, and a twin-lead thin-film transmission line in capacitive coupling with the base region of the magnetotransistor. The presence of a magnetic field in the base region creates a Hall voltage which produces a pulse on the transmission line.

REFERENCES:
patent: 3585462 (1971-06-01), Lehovec
Chaudhari et al., "Integration of Magnetic Bubble Domain Devices with Semiconductor Sensing Devices", Apr. 1973, IBM Tech. Disc. Bul., vol. 15, No. 11, pp. 3336-3337.

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