Semiconductor magnetic field sensor

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357 35, 357 36, H01L 2722

Patent

active

049996924

ABSTRACT:
A semiconductor magnetic field sensor has a base region, an emitter which injects minority carriers into the base region along an injection axis, and a collector intersected by the injection axis which collects minority carrier flows. An additional pair of collectors are laterally spaced from the emitter and the injection axis to receive lateral current components arising in the base region from the injected minority carriers. Magnetic fields applied to the base cause a redistribution of the minority carriers between the lateral current components and the strength of the magnetic field can be measured by comparing the magnitudes of the resulting collector currents. Base strips on laterally opposing sides of the emitter form junctions that suppress parasitic lateral injection. Reverse biasing the junctions focuses the injected minority carriers to a greater degree along the injection axis thereby markedly enhancing device sensitivity. Different biasing voltages can be applied to the junctions to shift the injection axis laterally thereby compensating for offsets in the quiescent currents in the two collectors. Base strips spaced outwardly and laterally relative to the pair of collectors permit the quiescent collector currents to be adjusted independent of the biasing voltages applied to the junctions.

REFERENCES:
patent: 4700211 (1987-10-01), Popovic et al.

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