Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material
Reexamination Certificate
2007-04-10
2007-04-10
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant material
C257S079000, C257SE33010
Reexamination Certificate
active
11249644
ABSTRACT:
A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including at least Ni is formed. On the surface of the first region, an electrode composed of an alloy including Ni and Aluminum is formed. On the electrode, a pad electrode for external connection consisting of Al or Au is formed.
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patent: 6008539 (1999-12-01), Shibata et al.
patent: 6992331 (2006-01-01), Hon et al.
patent: 7071490 (2006-07-01), Edmond et al.
patent: 2004/0094772 (2004-05-01), Hon et al.
patent: 06-314822 (1994-08-01), None
Office Action issued on Sep. 26, 2006, on the counterpart Taiwanese Patent Application No. 094135822. Total of 6 pages.
Kamii Yasuhiro
Kato Takasi
Moku Tetsuji
Niwa Arei
Sato Junji
Rodela Eduardo A.
Tran Minhloan
Wood Herron & Evans L.L.P.
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