Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2009-01-07
2010-11-16
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S206000, C257S365000, C257SE27064, C257SE29126, C257SE29137
Reexamination Certificate
active
07834358
ABSTRACT:
Basic logic gates are formed in a small area, and a highly integrated and microscopic structure is provided. In an nMOSFET and a pMOSFET, gate electrodes are formed facing each other and sandwiching a semiconductor region via gate insulting layers. Respective drain regions of the nMOSFET and the pMOSFET are connected to each other. A high potential is applied to a source region of the pMOSFET while an intermediate potential between the high and a low potential is applied to a source region of the nMOSFET. As a result, a NAND gate is provided. The intermediate potential between the high and the low potential is applied to the source region of the pMOSFET. The low potential is applied to the source region of the nMOSFET. As a result, a NOR gate is provided.
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Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushik Kaisha Toshiba
Pizarro Marcos D.
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