Semiconductor logical FET device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307448, H03K 19017

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active

052910776

ABSTRACT:
A semiconductor logical device provides one or a plurality of first field effect transistor(s) which perform a switching operation in accordance with an input signal input to a gate contact thereof, a first element which is constituted by a field effect transistor whose gate and source contacts are subjected to short-circuit, and which is connected as a load of the first field effect transistor, a second element which is constituted by a field effect transistor whose gate and source contacts are subjected to short-circuit and which is connected in series to the first element to act as a load of the first field effect transistor, a source follower circuit for power-amplifying a signal which is generated in the gate-source contact of the first element, and a second field effect transistor whose drain contact is connected to the gate-source contact of the second element, whose source contact is connected to an anode contact of a diode which generates a desired voltage, and to whose gate contact an output signal of the source follower circuit is applied.

REFERENCES:
patent: 4935647 (1990-06-01), Larkins
patent: 4996447 (1991-02-01), Tanoi
patent: 5027007 (1991-06-01), LaRue et al.
patent: 5051626 (1991-09-01), Katii
patent: 5159208 (1992-10-01), Kaneko
D. E. Fulkerson, "Feedback FET Logic: A Robust, High-Speed, Low-Power GaAs Logic Family", IEEE Journal of Solid State Circuit, vol. 26, No. 1, Jan. 1991, pp. 70-74.

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