Semiconductor logic circuit using two n-type negative resistance

Details Semiconductor logic circuit using two n-type negative resistance Semiconductor logic circuit using two n-type negative resistance

1992-07-14

1994-05-17

Hudspeth, David R.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307322, 257104, H03K 17125

Patent

active

053131177

ABSTRACT:
A semiconductor elements having N-type negative resistance characteristics are connected in series to obtain a series circuit. The two ends of the series circuit serve as drive voltage terminals to which periodic drive voltages are applied. At least one of the semiconductor elements has a control electrode to which a voltage is applied to change the peak current. A connection point between the two semiconductor elements serves as an output terminal.

REFERENCES:
patent: 3324308 (1967-06-01), Alford
patent: 4242595 (1980-12-01), Lehovec
patent: 4835581 (1989-05-01), Kuroda et al.
patent: 5151618 (1992-09-01), Yokoyama et al.
H. C. Liu et al., "Heterojunction Double-Barrier Diodes for Logic Applications", Appl. Phys. Lett. 50(18), 4 May 1987, pp. 1246-1248.
W. B. Kinard et al., "Fabrication of a Gated Gallium Arsenide Heterostructure Resonant Tunneling Diode", J. Vac. Sci. Technol. B 8(3), May/Jun. 1990, pp. 393-396.
Federico Capasso et al., "Quantum Functional Devices: Resonant-Tunneling Transistors, Circuits With Reduced Complexity, and Multiple-Valued Logic", IEEE Transactions on Electron Devices, vol. 36, No. 10, Oct. 1989, pp. 2065-2082.
J. R. Soderstrom et al., "New Negative Differential Resistance Device Based on Resonant Interband Tunneling", Appl. Phys. Lett. 55(11), 11 Sep. 1989, pp. 1094-1096.
J. R. Soderstrom et al., "Demonstration of Large Peak-two-Valley Current Ratios In InAs/A1GaSb/InAs Single-Barrier Heterostructure", App. Phys. Lett. 55(13), 25 Sep. 1989, pp. 1348-1350.

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