Semiconductor liquid phase epitaxial growth method and apparatus

Details Semiconductor liquid phase epitaxial growth method and apparatus Semiconductor liquid phase epitaxial growth method and apparatus

1997-05-30

1999-07-13

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

117 57, 117 60, 118405, C30B 1906

Patent

active

059221267

ABSTRACT:
The disclosed semiconductor liquid phase epitaxial growth method and apparatus and the wafer holder used therefor can improve the deposition of polycrystal, the non-uniformity of film thickness, the thermal deterioration of the substrate, etc. The wafer holder comprises a holder body (11) formed with at least one wafer accommodating space in which at least two semiconductor wafers (15) can be held in such a way that reverse surfaces of the two wafers are brought into contact with two opposing inner side walls of the wafer holder and right surfaces of the two wafers are opposed to each other with a predetermined space between the two; and a holder cover (12) for covering an open surface of the holder body (11). Further, the holder body (11) is formed with an inlet port (16) for injecting a source into the wafer accommodating space and an outlet port (13) for exhausting the source from the wafer accommodating space.

REFERENCES:
patent: 5407858 (1995-04-01), Yanagisawa et al.
patent: 5512511 (1996-04-01), Kalisher
patent: 5529938 (1996-06-01), Umeda et al.
patent: 5603762 (1997-02-01), Kokune et al.
Blum et al., "Liquid Phase Epitaxy Growth of DH Laser Arrays", IBM Technical Disclosure Bulletin, vol. 15, No. 7. p. 2091, Dec. 1972.

Affiliated with

Also associated with

Rating

Semiconductor liquid phase epitaxial growth method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor liquid phase epitaxial growth method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor liquid phase epitaxial growth method and apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2272519