Semiconductor light valve having improved counterelectrode struc

Details Semiconductor light valve having improved counterelectrode struc Semiconductor light valve having improved counterelectrode struc

1979-05-29

1980-12-16

Bauer, Edward S.

350342, G02F 1135

Patent

active

042393477

ABSTRACT:
A liquid crystal light valve having an improved counterelectrode structure. The light valve includes a layer of liquid crystal material which lies intermediate a photosensitive substrate of intrinsic semiconductive material and the counterelectrode. The upper surface of the substrate is characterized by a highly doped peripheral channel stop. The counterelectrode comprises electrically insulated inner and outer regions, the inner region substantially overlying only the intrinsic material interior said highly doped peripheral channel stop so that an electrical bias may be selectively applied, greatly enhancing the dark current breakdown voltage of the device.

REFERENCES:
patent: 3824002 (1974-07-01), Beard
patent: 4093357 (1978-06-01), Jacobson et al.
patent: 4191454 (1980-03-01), Braatz et al.

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