Coherent light generators – Particular beam control device – Tuning
Reexamination Certificate
2011-01-25
2011-01-25
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular beam control device
Tuning
C372S044010
Reexamination Certificate
active
07876795
ABSTRACT:
A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.
REFERENCES:
patent: 4622671 (1986-11-01), Tsang
patent: 5333141 (1994-07-01), Wolf et al.
patent: 5588015 (1996-12-01), Yang
patent: 5799026 (1998-08-01), Meyer et al.
patent: 5901168 (1999-05-01), Baillargeon et al.
patent: 5978397 (1999-11-01), Capasso et al.
patent: 6404791 (2002-06-01), Yang
patent: 2003/0043877 (2003-03-01), Kaspi
Sirtori et al., “Quantum cascade unipolar intersubband light emitting diodes in the 8-13μm wavlength region”, Appl. Phys. Lett., Jan. 2, 1995, pp. 4-6, vol. 66(1).
Faist et al., “Laser action by tuning the oscillator strength”, Nature, Jun. 19, 1997, pp. 777-782, vol. 387.
Sherstnev et al., “Tuning characteristics of InAsSb continuous-wave lasers”, Applied Physics Letters, May 20, 2002, pp. 3676-3678, vol. 80, No. 20.
Thomas et al., “Widely tunable light-emitting diodes by Stark effect in forward bias”, Applied Physics Letters, Aug. 26, 2002, pp. 1582-1584, vol. 81, No. 9.
Vasilyev et al., “Injection cascade lasers with graded gap barriers”, Journal of Applied Physics, Mar. 1, 2003, pp. 2349-2352, vol. 93, No. 5.
Thomas et al., “Tunable laser diodes by Start effect”, Applied Physics Letters, Aug. 18, 2003, pp. 1304-1306, vol. 83, No. 7.
Belenky Gregory
Bruno John D.
Kisin Mikhail V.
Luryi Serge
Shterengas Leon
Hagan Sean
Harvey Minsun
Maxion Technologies, Inc.
Pietragallo Gordon Alfano Bosick & Raspanti, LLP
The Research Foundation of State University of New York
LandOfFree
Semiconductor light source with electrically tunable... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light source with electrically tunable..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light source with electrically tunable... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2710007