Semiconductor light source on the basis of silicon carbide singl

Details Semiconductor light source on the basis of silicon carbide singl Semiconductor light source on the basis of silicon carbide singl

1973-09-06

1976-08-03

Rosenberg, Peter D.

Metal treatment

Barrier layer stock material, p-n type

148 15, H01L 2100

Patent

active

039727491

ABSTRACT:
A semiconductor light source on the basis of n-type silicon carbide single crystal, wherein an epitaxial silicon carbide film of the same type is disposed on the basic single crystal, a p-n junction with a depth of 0.1-2 .mu.m is arranged on the surface of this film, the basic silicon carbide single crystal having a concentration of uncompensated donor atoms of 5.sup.. 10.sup.17 - 5.sup.. 10.sup.18 cm.sup.-.sup.3 and a concentration of atoms of secondary impurities not greater than 2.sup.. 10.sup.18 cm.sup.-.sup.3, while the epitaxial film has a concentration of uncompensated donor atoms of 0.8.sup.. 10.sup.18 -3.sup.. 10.sup.18 cm.sup.-.sup.3, a concentration of atoms of secondary impurities of 0.4.sup.. 10.sup.17 -1.5.sup.. 10.sup.17 cm.sup.-.sup.3 and a thickness of 5-100 .mu.m.

REFERENCES:
patent: 2937323 (1960-05-01), Kroko
patent: 3030704 (1962-04-01), Hall
patent: 3121829 (1964-02-01), Huizing
patent: 3210624 (1965-10-01), Williams
patent: 3517281 (1970-06-01), Mlavsky
patent: 3577285 (1971-05-01), Rutz

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