Semiconductor light source formed of layer stack with total thic

Details Semiconductor light source formed of layer stack with total thic Semiconductor light source formed of layer stack with total thic

1998-09-28

2000-08-29

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 99, 372 46, 372 48, H01L 3300

Patent

active

061112720

ABSTRACT:
A semiconductor light source with low photon absorption is not only structurally simple, but is also easy to produce. The light source is formed of a layer stack with a total thickness of 50 .mu.m which is secured at a separate carrier body and connected to contacts of the carrier body with this thickness alone i.e. without intimate connection to a substrate, by a separate connecting structure. The diode is advantageous for realizing IREDs and LEDs of high optical performance.

REFERENCES:
patent: 3900863 (1975-08-01), Kim
patent: 5344517 (1994-09-01), Houlding
patent: 5502316 (1996-03-01), Kish et al.
patent: 5578162 (1996-11-01), D'Asaro et al.
patent: 5652438 (1997-07-01), Sassa et al.
patent: 5705834 (1998-01-01), Egalon et al.

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